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? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? surface mount

ultrafast, soft recovery diode fred v r = 200v i f(av) = 25a t rr = 35ns

HFB25HJ20 www.irf.com 1 parameter max. units v r cathode to anode voltage 200 v i f(av) continuous forward current, t c = 106c 25 i fsm single pulse forward current, t c = 25c 150 p d @ t c = 25c maximum power dissipation 70 w t j, t stg operating junction and storage temperature range -55 to +150 c

case style smd-0.5 these ultrafast, soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ? esd rating: class ns per mil-std-750, method 1020 pd-94150c
2 www.irf.com HFB25HJ20 !" parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 200 ? ? v i r = 100a v f forward voltage ? ? 1.18 i f = 25a, t j =-55c electrical characteristics @ t j = 25c (unless otherwise specified) l s series inductance ? 4.8 ? nh measured from center of cathod pad to center of anode pad c t junction capacitance, see fig. 3 ? ? 78 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 250 a v r = v r rated, t j = 125c # dynamic recovery characteristics @ t j = 25c (unless otherwise specified) # parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 35 ns i f = 1.0a,v r = 30v, di f /dt = 200a/s t rr1 reverse recovery time ? 28 ? ns t j = 25c see fig. t rr2 ? 43? t j = 125c 5 i f = 25a i rrm1 peak recovery current ? 3.9 ? t j = 25c see fig. i rrm2 ? 6.1 ? t j = 125c 6 v r = 160v q rr1 reverse recovery charge ? 61 ? t j = 25c see fig. q rr2 ? 146 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 820 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 1560 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case ? 1.76 wt weight 1.0 ? g c/w see fig. 1 ? ? 0.94 i f = 10a, t j = 25c ? ? 1.07 i f = 25a, t j = 25c ? ? 1.19 i f = 50a, t j = 25c ? ? 0.88 i f = 25a, t j =125c v
www.irf.com 3 HFB25HJ20 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 0 40 80 120 160 200 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 r e v e r s e c u r r e n t - i r ( a ) 125c 75c 25c 100c 0 40 80 120 160 200 reverse voltage - v r (v) 10 100 1000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2
4 www.irf.com HFB25HJ20 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, 100 1000 di f / dt - ( a / s ) 20 30 40 50 t r r - ( n s ) v r = 160v t j = 125c t j = 25c i f = 12.5a i f = 50a i f = 25a 100 1000 di f / dt - ( a / s ) 1 10 100 i r r m - ( a ) v r = 160v t j = 125c t j = 25c i f = 12.5a i f = 50a i f = 25a 100 1000 di f / dt - ( a / s ) 10 100 1000 q r r - ( n c ) v r = 160v t j = 125c t j = 25c i f = 12.5a i f = 50a i f = 25a 100 1000 di f / dt - ( a / s ) 100 1000 10000 d i ( r e c ) m / d t - ( a / s ) v r = 160v t j = 125c t j = 25c i f = 12.5a i f = 50a i f = 25a
www.irf.com 5 HFB25HJ20

!"#$%# % &### fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f '

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/ 1&#.#)# reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2012

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